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	SiGe HBT device in mixed dry wet etching (EI收录)
	Liu, Daoguang[1,2]; Xu, Jun[1]; Xu, Shiliu[2]; Hao, Yue[3]; Qian, Peixin[1]; Liu, Zhihong[1]; Hu, Gangyi[2]; Zhang, Zhengfan[2]; Zhang, Jing[2]; Liu, Rongkan[2]
会议名称	Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS
会议日期	January 18, 2006 - January 21, 2006
会议地点	Zhuhai, China
关键词	Alignment Alkali metals Chemical properties Curing Cutoff frequency Drying Etching Germanium Heterojunction bipolar transistors Molecules NEMS Optical design Plasma etching Potassium Potassium hydroxide Semiconducting germanium compounds Semiconducting silicon compounds Silicon Silicon alloys Sulfur Sulfur hexafluoride Wet etching
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2115719
专题	华南理工大学
作者单位	1.[1] Institute of Microelectronics, Tsinghua University, China 2.[2] SiGe Technology Group, National Labs of Analog ICs, China 3.[3] Microelectronics Institute, Xidian University, China 4.[4] DaimlerChrysler AG, Forschung und Technologie, Germany
推荐引用方式 GB/T 7714	Liu, Daoguang[1,2],Xu, Jun[1],Xu, Shiliu[2],等. SiGe HBT device in mixed dry wet etching (EI收录)[C]. 见:Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS. Zhuhai, China. January 18, 2006 - January 21, 2006.

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