High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD

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	High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD
	Wu CM ; Zhang BP ; Shang JZ ; Cai LE ; Zhang JY ; Yu JZ ; Wang QM
刊名	semiconductor science and technology
	2011
卷号	26 期号:5 页码:article no.55013
关键词	CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY PHASE EPITAXY MIRRORS GAN WAVELENGTHS
ISSN号	0268-1242
通讯作者	wu, cm, xiamen univ, dept phys, lab micro nano optoelect, xiamen 361005, peoples r china.
学科主题	光电子学
收录类别	SCI
资助信息	project of high technology research and development of china [2006aa03z409]; national natural science foundation of china [10974165, 91023048]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	high-reflectivity aln/gan distributed bragg reflectors (dbrs) were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (mocvd). a low temperature (lt) predeposition aln layer and indium doping during the growth of the lambda/4 aln layers were adopted to improve the quality of the dbr. during the growth of the dbr, the structural alternation occurred abruptly when an aln layer was grown on a gan layer but gradually in reverse order, which resulted in a stack of quasi-three-layer periodic arrangement rather than two-layer arrangement for one growth period. the peak reflectivity of dbrs reaches 99% at the designed wavelength. the root mean square (rms) roughness of the surface is around 4 nm over a 10 mu m x 10 mu m surface area of the dbr. meanwhile, the high-reflectivity (93%) and crack-free dbr with only 16-period aln/gan structures was obtained by employing an optimized aln predeposition layer.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20981]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Wu CM,Zhang BP,Shang JZ,et al. High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD[J]. semiconductor science and technology,2011,26(5):article no.55013.
APA	Wu CM.,Zhang BP.,Shang JZ.,Cai LE.,Zhang JY.,...&Wang QM.(2011).High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD.semiconductor science and technology,26(5),article no.55013.
MLA	Wu CM,et al."High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD".semiconductor science and technology 26.5(2011):article no.55013.