Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers

	Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers
	Cui K; Wei Y; Huo YH; Zhang YH
刊名	applied physics letters
	2011
卷号	98 期号:10 页码:article no.103501
ISSN号	0003-6951
通讯作者	ma, wq, chinese acad sci, inst semicond, lab nanooptoelect, pob 912, beijing 100083, peoples r china. wqma@semi.ac.cn
学科主题	光电子学
收录类别	SCI
资助信息	china's national 973 research programme [2010cb327602]; natural science fund for innovative research group [61021003]
语种	英语
公开日期	2011-07-06 ; 2011-07-15
附注	we report a two-color quantum dot infrared photodetector (qdip) using double tunneling barriers (dtbs) on one side of the ingaas/algaas dots. the two-color detection is achieved by changing the polarity of the applied bias voltages. in contrast, the same qdip structure without the dtbs does not exhibit this detection wavelength tunability by switching the bias polarity. the two-color detection is ascribed to a different escape mechanism of electrons between positive and negative biases. the electrons escape out of the quantum well through resonant tunneling for a positive bias voltage while tunnel through a triangular barrier for a negative bias voltage. (c) 2011 american institute of physics. [doi:10.1063/1.3561777]
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21347]
专题	半导体研究所_纳米光电子实验室
推荐引用方式 GB/T 7714	Cui K,Wei Y,Huo YH,et al. Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers[J]. applied physics letters,2011,98(10):article no.103501.
APA	Cui K,Wei Y,Huo YH,&Zhang YH.(2011).Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers.applied physics letters,98(10),article no.103501.
MLA	Cui K,et al."Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers".applied physics letters 98.10(2011):article no.103501.