Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures

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	Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures
	Yu JL
刊名	applied physics letters
	2011
卷号	98 期号:12 页码:article no.122104
ISSN号	0003-6951
通讯作者	yin, cm, peking univ, sch phys, state key lab artificial microstruct & mesoscop, beijing 100871, peoples r china. ntang@pku.edu.cn ; bshen@pku.edu.cn
学科主题	半导体材料
收录类别	SCI
资助信息	national natural science foundation of china [60990313, 60890193, 60806042, 60736033]; research fund for the doctoral program of higher education in china [200800011021]; wuhan national high magnetic field center [whmfckf2011004]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	the photocurrent has been measured in al0.25ga0.75n/gan heterostructures at room temperature, and the photoinduced anomalous hall effect (ahe) was observed. the ahe current changes linearly with the varied longitudinal electric fields. due to the strong rashba spin-orbit coupling of the two-dimensional electron gas in al0.25ga0.75n/gan heterostructures, the intrinsic anomalous hall mechanism is supposed to contribute to the photoinduced ahe. the photoinduced ahe measurement proposed in this study could be used to other spin related measurements at room temperature. (c) 2011 american institute of physics. [doi:10.1063/1.3569948]
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21273]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Yu JL. Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures[J]. applied physics letters,2011,98(12):article no.122104.
APA	Yu JL.(2011).Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures.applied physics letters,98(12),article no.122104.
MLA	Yu JL."Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures".applied physics letters 98.12(2011):article no.122104.