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	An Analytic Channel Potential Based Model for Dynamic Depletion Surrounding-Gate MOSFETs with Arbitrary Doping Level (CPCI-S收录)
	Zhang, Lining[1,2]; Zhang, Jian[2]; Liu, Feng[2]; Chen, Lin[2]; Xu, Yiwen[2]; Zhou, Wang[2]; He, Frank[1,2]
会议名称	2009 1ST ASIA SYMPOSIUM ON QUALITY ELECTRONIC DESIGN
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2082021
专题	华南理工大学
作者单位	1.[1]Peking Univ, Shenzhen Grad Sch, Key Lab Integrated Microsyst, Res Ctr Micro & Nanodevice & Technol, Shenzhen 518055, Peoples R China 2.[2]Peking Univ, Circuits Chinese Minist Educ, Key Lab Microelect Devices, TSRC, Beijing 100871, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Lining[1,2],Zhang, Jian[2],Liu, Feng[2],等. An Analytic Channel Potential Based Model for Dynamic Depletion Surrounding-Gate MOSFETs with Arbitrary Doping Level (CPCI-S收录)[C]. 见:2009 1ST ASIA SYMPOSIUM ON QUALITY ELECTRONIC DESIGN.

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