Numerical Simulation Study on Electron Mobility of Independent DG MOSFETs (CPCI-S收录) | |
Chen, Lin[2,3]; Xu, Yiwen[3]; Zhang, Lining[3]; Zhou, Wang[3]; He, Frank[1,2,4] | |
会议名称 | 2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009) |
URL标识 | 查看原文 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2081887 |
专题 | 华南理工大学 |
作者单位 | 1.[1]Peking Univ, TSRC, Sch Elect Engn & Comp Sci, Beijing 100871, Peoples R China 2.[2]Peking Univ, Shenzhen Grad Sch, Key Lab Integrated Microsyst, Sch Comp & Informat Engn, Shenzhen 518055, Peoples R China 3.[3]Peking Univ, TSRC, Sch Elect Engn & Comp Sci, Inst Microelect, Beijing 100871, Peoples R China 4.[4]Peking Univ, Shenzhen Inst, Shenzhen SOC Key Lab, PKU,HKUST, Shenzhen 518057, Peoples R China |
推荐引用方式 GB/T 7714 | Chen, Lin[2,3],Xu, Yiwen[3],Zhang, Lining[3],等. Numerical Simulation Study on Electron Mobility of Independent DG MOSFETs (CPCI-S收录)[C]. 见:2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009). |
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