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Numerical Simulation Study on Electron Mobility of Independent DG MOSFETs (CPCI-S收录)
Chen, Lin[2,3]; Xu, Yiwen[3]; Zhang, Lining[3]; Zhou, Wang[3]; He, Frank[1,2,4]
会议名称2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009)
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内容类型会议论文
URI标识http://www.corc.org.cn/handle/1471x/2081887
专题华南理工大学
作者单位1.[1]Peking Univ, TSRC, Sch Elect Engn & Comp Sci, Beijing 100871, Peoples R China
2.[2]Peking Univ, Shenzhen Grad Sch, Key Lab Integrated Microsyst, Sch Comp & Informat Engn, Shenzhen 518055, Peoples R China
3.[3]Peking Univ, TSRC, Sch Elect Engn & Comp Sci, Inst Microelect, Beijing 100871, Peoples R China
4.[4]Peking Univ, Shenzhen Inst, Shenzhen SOC Key Lab, PKU,HKUST, Shenzhen 518057, Peoples R China
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Chen, Lin[2,3],Xu, Yiwen[3],Zhang, Lining[3],等. Numerical Simulation Study on Electron Mobility of Independent DG MOSFETs (CPCI-S收录)[C]. 见:2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009).
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