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	Low-voltage polymer thin-film transistors with high-k HfTiO gate dielectric annealed in NH3 or N2 (EI收录)
	Deng, L.F.[1]; Choi, H.W.[1]; Lai, P.T.[1]; Liu, Y.R.[2]; Xu, J.P.[3]
会议名称	2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
会议日期	December 25, 2009 - December 27, 2009
会议地点	Xi'an, China
关键词	Annealing Carrier mobility Coatings Dielectric devices Dielectric films Gate dielectrics Gates (transistor) Hafnium Polymeric films Semiconducting organic compounds Solid state devices Spin dynamics
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2078655
专题	华南理工大学
作者单位	1.[1] Electrical and Electronic Department, University of Hong Kong, Hong Kong, Hong Kong 2.[2] School of Electronic and Information Engineering, South China University of Technology, Guangzhou, 510640, China 3.[3] Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan, China
推荐引用方式 GB/T 7714	Deng, L.F.[1],Choi, H.W.[1],Lai, P.T.[1],等. Low-voltage polymer thin-film transistors with high-k HfTiO gate dielectric annealed in NH3 or N2 (EI收录)[C]. 见:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009. Xi'an, China. December 25, 2009 - December 27, 2009.

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