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	Numerical Simulation of Programming and Read Process for Nano-Scale Phase-Change Memory (PCM) Cell (CPCI-S收录)
	Wei, Yiqun[1,2]; Wang, Laidong[1,2]; Wang, Wei[1,2]; Lin, Xinnan[1,2]; He, Frank[1,2,3]; Chan, Mansun[1,2]; Zhang, Xing[3]
会议名称	2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009)
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2076990
专题	华南理工大学
作者单位	1.[1]Peking Univ, Shenzhen Grad Sch, Sch Comp & Informat Engn, Key Lab Integrated Microsyst, Shenzhen 518055, Peoples R China 2.[2]Peking Univ, PKU HKUST Shenzhen Inst, Shenzhen SOC Key Lab, Shenzhen 518057, Peoples R China 3.[3]Peking Univ, Inst Microelect, Sch Elect Engn & Comp Sci, TSRC, Beijing 100871, Peoples R China
推荐引用方式 GB/T 7714	Wei, Yiqun[1,2],Wang, Laidong[1,2],Wang, Wei[1,2],等. Numerical Simulation of Programming and Read Process for Nano-Scale Phase-Change Memory (PCM) Cell (CPCI-S收录)[C]. 见:2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009).

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