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	Improved performance of low-voltage pentacene OTFTs by incorporating la to hafinium oxide gate dielectric (EI收录)
	Deng, L.F.[1]; Lai, P.T.[1]; Tao, Q.B.[1]; Choi, H.W.[1]; Xu, J.P.[2]; Chen, W.B.[3]; Che, C.M.[3]; Liu, Y.R.[4]
会议名称	2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
会议日期	December 15, 2010 - December 17, 2010
会议地点	Hong Kong, China
关键词	Dielectric materials Gate dielectrics Gates (transistor) Hafnium compounds Semiconducting organic compounds Solid state devices Threshold voltage
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2065291
专题	华南理工大学
作者单位	1.[1] Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, Hong Kong 2.[2] Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan, China 3.[3] Department of Chemistry, University of Hong Kong, Hong Kong, Hong Kong 4.[4] School of Electronic and Information Engineering, South China University of Technology, Guangzhou, China
推荐引用方式 GB/T 7714	Deng, L.F.[1],Lai, P.T.[1],Tao, Q.B.[1],等. Improved performance of low-voltage pentacene OTFTs by incorporating la to hafinium oxide gate dielectric (EI收录)[C]. 见:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010. Hong Kong, China. December 15, 2010 - December 17, 2010.

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