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	Impact of temperature cycling on copper interconnect (EI收录)
	Lin, Xiao-Ling[1,2]; Hou, Tong-Xian[1]; Zhang, Xiao-Wen[2]; Yao, Ruo-He[1]
会议名称	Proceedings - 2010 11th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2010
会议日期	August 16, 2010 - August 19, 2010
会议地点	Xi'an, China
关键词	Electronics packaging Finite element method Microelectronics Morphology Stress concentration
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2065145
专题	华南理工大学
作者单位	1.[1] Institute of Microelectronics, School of Electron and Information Engineering, South China University of Technology, Guangzhou 510640, China 2.[2] Natl. Key Lab. of Sci. and Technology on Reliability Physics and Application of Electrical Component, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510640, China
推荐引用方式 GB/T 7714	Lin, Xiao-Ling[1,2],Hou, Tong-Xian[1],Zhang, Xiao-Wen[2],等. Impact of temperature cycling on copper interconnect (EI收录)[C]. 见:Proceedings - 2010 11th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2010. Xi'an, China. August 16, 2010 - August 19, 2010.

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