QQ客服 官方微博 反馈留言

	Design for improved NBTI reliability of CMOS digital IC (EI收录)
	Liu, Lining[1]; Li, Bin[1]; Zhao, Mingjian[1]; Xie, Jiang[2]
会议名称	2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
会议日期	December 15, 2010 - December 17, 2010
会议地点	Hong Kong, China
关键词	Design Digital integrated circuits Electric network analysis Electric network topology Integrated circuits Reliability
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2063290
专题	华南理工大学
作者单位	1.[1] Institute of Microelectronics, School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China 2.[2] China Electronic Product Reliability, Environment Testing Research Institute, Guangzhou 510610, China
推荐引用方式 GB/T 7714	Liu, Lining[1],Li, Bin[1],Zhao, Mingjian[1],等. Design for improved NBTI reliability of CMOS digital IC (EI收录)[C]. 见:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010. Hong Kong, China. December 15, 2010 - December 17, 2010.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。