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	Numerical Study on Effect of Random Dopant Fluctuation on Double Gate MOSFET Based 6-T SRAM Performance (CPCI-S收录)
	Zhang, Xiufang[1,2]; Ma, Chenyue[2]; Zhao, Wei[2]; Zhang, Chenfei[3]; Wang, Guozeng[2]; Wu, Wen[2]; Wang, Wenping[2]; Cao, Yu[2]; Yang, Shengqi[4]; Yang, Zhang[2]
会议名称	NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2059085
专题	华南理工大学
作者单位	1.[1]Peking Univ, Key Lab Integrated Microsyst, Sch Comp & Informat Engn, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China 2.[2]Peking Univ, Shenzhen SOC Key Lab, PKU HKUST Shenzhen Inst, Shenzhen 518057, Peoples R China 3.[3]Peking Univ, Inst Microelect, TSRC, Beijing 100871, Peoples R China 4.[4]Shanghai Univ, Commun & Informat Engn Sch, Shanghai 200072, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Xiufang[1,2],Ma, Chenyue[2],Zhao, Wei[2],等. Numerical Study on Effect of Random Dopant Fluctuation on Double Gate MOSFET Based 6-T SRAM Performance (CPCI-S收录)[C]. 见:NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2.

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