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	Effects of different annealing gases on pentacene OTFT with HfLaO gate dielectric (EI收录)
	Deng, L.F.[1]; Lai, P.T.[1]; Chen, W.B.[2]; Xu, J.P.[3]; Liu, Y.R.[4]; Choi, H.W.[1]; Che, C.M.[2]
会议名称	IEEE Electron Device Letters
关键词	Annealing Carrier mobility Chemical sensors Gate dielectrics Gates (transistor) Passivation Semiconducting organic compounds
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2058860
专题	华南理工大学
作者单位	1.[1] Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam, Hong Kong, Hong Kong 2.[2] Department of Chemistry, University of Hong Kong, Pokfulam, Hong Kong, Hong Kong 3.[3] Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China 4.[4] School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510641, China
推荐引用方式 GB/T 7714	Deng, L.F.[1],Lai, P.T.[1],Chen, W.B.[2],等. Effects of different annealing gases on pentacene OTFT with HfLaO gate dielectric (EI收录)[C]. 见:IEEE Electron Device Letters.

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