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	Influence of source and drain contacts on the properties of the indium-zinc oxide thin-film transistors based on anodic aluminum oxide gate d (EI收录)
	Lan, Linfeng[1,2]; Xu, Miao[2]; Peng, Junbiao[1,2]; Xu, Hua[1]; Li, Min[1]; Luo, Dongxiang[1]; Zou, Jianhua[2]; Tao, Hong[2]; Wang, Lei[1,2]; Yao, Rihui[1]
会议名称	Journal of Applied Physics
关键词	Aluminum Anodic oxidation Dielectric materials Electrodes Electron mobility Indium Oxides Thin film transistors X ray photoelectron spectroscopy Zinc Zinc oxide
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2058249
专题	华南理工大学
作者单位	1.[1] Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescence Materials and Devices, South China University of Technology, Guangzhou 510640, China 2.[2] New Vision Opto-Electronic Technology Co., Ltd, Guangzhou 510640, China
推荐引用方式 GB/T 7714	Lan, Linfeng[1,2],Xu, Miao[2],Peng, Junbiao[1,2],等. Influence of source and drain contacts on the properties of the indium-zinc oxide thin-film transistors based on anodic aluminum oxide gate d (EI收录)[C]. 见:Journal of Applied Physics.

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