Intra-Cell Process Variability and Compact Modeling of LWR Effects: from Self-Aligned Multiple Patterning to Multiple-Gate MOSFETs (CPCI-S收录) | |
Chen, Yijian[1]; Kang, Weiling[1]; Cheng, Qi[1] | |
会议名称 | DESIGN FOR MANUFACTURABILITY THROUGH DESIGN-PROCESS INTEGRATION VI |
关键词 | Self-aligned multiple patterning (SAMP) self-aligned triple patterning (SATP) self-aligned quadruple patterning (SAQP) multiple-gate MOSFET FinFET line-width roughness (LWR) |
URL标识 | 查看原文 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2055523 |
专题 | 华南理工大学 |
作者单位 | Peking Univ, Shenzhen Grad Sch, Sch Comp & Informat Engn, Shenzhen 518055, Guangdong, Peoples R China |
推荐引用方式 GB/T 7714 | Chen, Yijian[1],Kang, Weiling[1],Cheng, Qi[1]. Intra-Cell Process Variability and Compact Modeling of LWR Effects: from Self-Aligned Multiple Patterning to Multiple-Gate MOSFETs (CPCI-S收录)[C]. 见:DESIGN FOR MANUFACTURABILITY THROUGH DESIGN-PROCESS INTEGRATION VI. |
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