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	Intra-Cell Process Variability and Compact Modeling of LWR Effects: from Self-Aligned Multiple Patterning to Multiple-Gate MOSFETs (CPCI-S收录)
	Chen, Yijian[1]; Kang, Weiling[1]; Cheng, Qi[1]
会议名称	DESIGN FOR MANUFACTURABILITY THROUGH DESIGN-PROCESS INTEGRATION VI
关键词	Self-aligned multiple patterning (SAMP) self-aligned triple patterning (SATP) self-aligned quadruple patterning (SAQP) multiple-gate MOSFET FinFET line-width roughness (LWR)
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2055523
专题	华南理工大学
作者单位	Peking Univ, Shenzhen Grad Sch, Sch Comp & Informat Engn, Shenzhen 518055, Guangdong, Peoples R China
推荐引用方式 GB/T 7714	Chen, Yijian[1],Kang, Weiling[1],Cheng, Qi[1]. Intra-Cell Process Variability and Compact Modeling of LWR Effects: from Self-Aligned Multiple Patterning to Multiple-Gate MOSFETs (CPCI-S收录)[C]. 见:DESIGN FOR MANUFACTURABILITY THROUGH DESIGN-PROCESS INTEGRATION VI.

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