High Performance Multilevel Data Storage in TaTiN/HfOx/Pt Based RRAM Using Bipolar and Unipolar Combined Switching Mode (CPCI-S收录) | |
Chen, Bing[1,2]; Deng, Ye Xin[2]; Gao, Bin[2]; Liu, Rui[2]; Ma, Long[1,2]; Huang, Peng[2]; Zhang, Fei Fei[2]; Liu, Li Feng[2]; Liu, Xiao Yan[2]; Kang, Jin Feng[2] | |
会议名称 | 2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) |
URL标识 | 查看原文 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2054688 |
专题 | 华南理工大学 |
作者单位 | 1.[1]Peking Univ, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China 2.[2]Peking Univ, Inst Microelect, Beijing 100871, Peoples R China |
推荐引用方式 GB/T 7714 | Chen, Bing[1,2],Deng, Ye Xin[2],Gao, Bin[2],等. High Performance Multilevel Data Storage in TaTiN/HfOx/Pt Based RRAM Using Bipolar and Unipolar Combined Switching Mode (CPCI-S收录)[C]. 见:2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012). |
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