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	High Performance Multilevel Data Storage in TaTiN/HfOx/Pt Based RRAM Using Bipolar and Unipolar Combined Switching Mode (CPCI-S收录)
	Chen, Bing[1,2]; Deng, Ye Xin[2]; Gao, Bin[2]; Liu, Rui[2]; Ma, Long[1,2]; Huang, Peng[2]; Zhang, Fei Fei[2]; Liu, Li Feng[2]; Liu, Xiao Yan[2]; Kang, Jin Feng[2]
会议名称	2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012)
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2054688
专题	华南理工大学
作者单位	1.[1]Peking Univ, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China 2.[2]Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
推荐引用方式 GB/T 7714	Chen, Bing[1,2],Deng, Ye Xin[2],Gao, Bin[2],等. High Performance Multilevel Data Storage in TaTiN/HfOx/Pt Based RRAM Using Bipolar and Unipolar Combined Switching Mode (CPCI-S收录)[C]. 见:2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012).

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