Fabrication and characterization of p-CuI/n-Si heterojunction diode (EI收录) | |
Xiong, Chao[1,2]; Xu, Ancheng[1]; Lu, Xingzhong[1]; Chen, Lei[1]; Zhu, Xifang[1]; Yao, Ruohe[2] | |
会议名称 | Key Engineering Materials |
会议日期 | August 5, 2012 - August 7, 2012 |
会议地点 | Shanghai, China |
关键词 | Bias voltage Functional materials Photovoltaic effects Semiconductor diodes Silicon |
URL标识 | 查看原文 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2052027 |
专题 | 华南理工大学 |
作者单位 | 1.[1] School of Photoelectric Engineering, Changzhou Institute of Technology, Changzhou, Jiangsu 213002, China 2.[2] School of Electronic and Information Engineering, South China University of Technology, Guangzhou, Guangdong 510641, China |
推荐引用方式 GB/T 7714 | Xiong, Chao[1,2],Xu, Ancheng[1],Lu, Xingzhong[1],等. Fabrication and characterization of p-CuI/n-Si heterojunction diode (EI收录)[C]. 见:Key Engineering Materials. Shanghai, China. August 5, 2012 - August 7, 2012. |
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