Fabrication and characterization of p-CuSCN/n-Si heterojunction diode (EI收录) | |
Xiong, Chao[1,2]; Yuan, Hong Chun[1]; Chen, Lei[1]; Xiao, Jin[1]; Ding, Li Hua[1]; Zhu, Xi Fang[1]; Zhou, Xiang Cai[1] | |
会议名称 | Applied Mechanics and Materials |
会议日期 | March 13, 2013 - March 14, 2013 |
会议地点 | Guangzhou, China |
关键词 | Bias voltage Information science Photovoltaic effects Semiconductor diodes Silicon |
URL标识 | 查看原文 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2048815 |
专题 | 华南理工大学 |
作者单位 | 1.[1] School of Photoelectric Engineering, Changzhou Institute of Technology, Changzhou, Jiangsu 213002, China 2.[2] School of Electronic and Information Engineering, South China University of Technology, Guangzhou, Guangdong 510641, China |
推荐引用方式 GB/T 7714 | Xiong, Chao[1,2],Yuan, Hong Chun[1],Chen, Lei[1],等. Fabrication and characterization of p-CuSCN/n-Si heterojunction diode (EI收录)[C]. 见:Applied Mechanics and Materials. Guangzhou, China. March 13, 2013 - March 14, 2013. |
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