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	Fabrication of diamond films on cu metal substrates with buffers (SiC or MoSi2) by hot filament chemical vapor deposition (EI收录)
	Zhao, Qi[1,2]; Dai, Ming-Jiang[2]; Tan, Di[2]; Wei, Chun-Bei[2]; Qiu, Wan-Qi[1]; Hou, Hui-Jun[2]
会议名称	Advanced Materials Research
会议日期	June 28, 2014 - June 29, 2014
会议地点	Shanghai, China
关键词	Buffer layers Chemical vapor deposition Copper Cracks Engineering technology Materials science Optical waveguides Scanning electron microscopy Silicon carbide Substrates Vapors X ray diffraction
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2043695
专题	华南理工大学
作者单位	1.[1] School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, China 2.[2] Guangzhou Research Institute of Non-ferrous Metals, Guangzhou 510651, China
推荐引用方式 GB/T 7714	Zhao, Qi[1,2],Dai, Ming-Jiang[2],Tan, Di[2],等. Fabrication of diamond films on cu metal substrates with buffers (SiC or MoSi2) by hot filament chemical vapor deposition (EI收录)[C]. 见:Advanced Materials Research. Shanghai, China. June 28, 2014 - June 29, 2014.

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