Fabrication of diamond films on cu metal substrates with buffers (SiC or MoSi2) by hot filament chemical vapor deposition (EI收录) | |
Zhao, Qi[1,2]; Dai, Ming-Jiang[2]; Tan, Di[2]; Wei, Chun-Bei[2]; Qiu, Wan-Qi[1]; Hou, Hui-Jun[2] | |
会议名称 | Advanced Materials Research |
会议日期 | June 28, 2014 - June 29, 2014 |
会议地点 | Shanghai, China |
关键词 | Buffer layers Chemical vapor deposition Copper Cracks Engineering technology Materials science Optical waveguides Scanning electron microscopy Silicon carbide Substrates Vapors X ray diffraction |
URL标识 | 查看原文 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2043695 |
专题 | 华南理工大学 |
作者单位 | 1.[1] School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, China 2.[2] Guangzhou Research Institute of Non-ferrous Metals, Guangzhou 510651, China |
推荐引用方式 GB/T 7714 | Zhao, Qi[1,2],Dai, Ming-Jiang[2],Tan, Di[2],等. Fabrication of diamond films on cu metal substrates with buffers (SiC or MoSi2) by hot filament chemical vapor deposition (EI收录)[C]. 见:Advanced Materials Research. Shanghai, China. June 28, 2014 - June 29, 2014. |
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