Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/ Si heterogeneous nanorods

	Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/ Si heterogeneous nanorods
	Bi Zhou ; S.W. Pan ; Rui Chen ; S.Y. Chen ; Cheng Li ; H.K. Lai ; J.Z. Yu ; X.F. Zhu
刊名	solid state communications
	2009
期号	149
合作状况	其它
学科主题	新型功能材料与固体内耗
收录类别	SCI
公开日期	2010-03-16
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn/handle/334002/3063]
专题	合肥物质科学研究院_中科院固体物理研究所
推荐引用方式 GB/T 7714	Bi Zhou,S.W. Pan,Rui Chen,et al. Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/ Si heterogeneous nanorods[J]. solid state communications,2009(149).
APA	Bi Zhou.,S.W. Pan.,Rui Chen.,S.Y. Chen.,Cheng Li.,...&X.F. Zhu.(2009).Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/ Si heterogeneous nanorods.solid state communications(149).
MLA	Bi Zhou,et al."Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/ Si heterogeneous nanorods".solid state communications .149(2009).