SiON as a barrier layer for depositing an Al2O3 thin film on Si for gate applications | |
Congmian Zhen ; Gang He ; Xiaoliang Wang ; Yukihiro Shimogaki | |
刊名 | surface and interface analysis
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2009 | |
期号 | 41 |
合作状况 | 其它 |
学科主题 | 纳米材料与技术 |
收录类别 | SCI |
公开日期 | 2010-03-08 |
内容类型 | 期刊论文 |
源URL | [http://ir.hfcas.ac.cn/handle/334002/3059] ![]() |
专题 | 合肥物质科学研究院_中科院固体物理研究所 |
推荐引用方式 GB/T 7714 | Congmian Zhen,Gang He,Xiaoliang Wang,et al. SiON as a barrier layer for depositing an Al2O3 thin film on Si for gate applications[J]. surface and interface analysis,2009(41). |
APA | Congmian Zhen,Gang He,Xiaoliang Wang,&Yukihiro Shimogaki.(2009).SiON as a barrier layer for depositing an Al2O3 thin film on Si for gate applications.surface and interface analysis(41). |
MLA | Congmian Zhen,et al."SiON as a barrier layer for depositing an Al2O3 thin film on Si for gate applications".surface and interface analysis .41(2009). |
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