High-temperature anisotropic silicon-etching steered synthesis of horizontally aligned silicon-based Zn2SiO4 nanowires

	High-temperature anisotropic silicon-etching steered synthesis of horizontally aligned silicon-based Zn2SiO4 nanowires
	Hongqiang Wang ; Guanghai Li ; Lichao Jia ; Liang Li ; Guozhong Wang
刊名	chem comm
	2009
期号	25
合作状况	其它
学科主题	纳米材料与技术
收录类别	SCI
公开日期	2010-02-05
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn/handle/334002/3012]
专题	合肥物质科学研究院_中科院固体物理研究所
推荐引用方式 GB/T 7714	Hongqiang Wang,Guanghai Li,Lichao Jia,et al. High-temperature anisotropic silicon-etching steered synthesis of horizontally aligned silicon-based Zn2SiO4 nanowires[J]. chem comm,2009(25).
APA	Hongqiang Wang,Guanghai Li,Lichao Jia,Liang Li,&Guozhong Wang.(2009).High-temperature anisotropic silicon-etching steered synthesis of horizontally aligned silicon-based Zn2SiO4 nanowires.chem comm(25).
MLA	Hongqiang Wang,et al."High-temperature anisotropic silicon-etching steered synthesis of horizontally aligned silicon-based Zn2SiO4 nanowires".chem comm .25(2009).