Effect of Germanium Doping on the Production and Evolution of Divacancy Complexes in Neutron Irradiated Czochralski Silicon | |
Dong, Peng; Yang, Ping; Yu, Xuegong; Chen, Lin; Ma, Yao; Li, Mo; Dai, Gang; Zhang, Jian | |
刊名 | JOURNAL OF ELECTRONIC MATERIALS
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2018 | |
卷号 | Vol.47 No.9页码:5019-5024 |
关键词 | Ge doping neutron irradiation divacancy complexes divacancy-oxygen complexes Czochralski silicon |
ISSN号 | 0361-5235 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/1869617 |
专题 | 四川大学 |
作者单位 | 1.China Acad Engn Phys, Inst Elect Engn, Mianyang 651999, Peoples R China 2.Zhejiang Univ, State Key Lab Si Mat, Hangzhou 310027, Zhejiang, Peoples R China 3.Sichuan Univ, Coll Phys Sci & Technol, Chengdu 610065, Sichuan, Peoples R China 4.China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Mianyang 651999, Peoples R China 5.Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China |
推荐引用方式 GB/T 7714 | Dong, Peng,Yang, Ping,Yu, Xuegong,et al. Effect of Germanium Doping on the Production and Evolution of Divacancy Complexes in Neutron Irradiated Czochralski Silicon[J]. JOURNAL OF ELECTRONIC MATERIALS,2018,Vol.47 No.9:5019-5024. |
APA | Dong, Peng.,Yang, Ping.,Yu, Xuegong.,Chen, Lin.,Ma, Yao.,...&Zhang, Jian.(2018).Effect of Germanium Doping on the Production and Evolution of Divacancy Complexes in Neutron Irradiated Czochralski Silicon.JOURNAL OF ELECTRONIC MATERIALS,Vol.47 No.9,5019-5024. |
MLA | Dong, Peng,et al."Effect of Germanium Doping on the Production and Evolution of Divacancy Complexes in Neutron Irradiated Czochralski Silicon".JOURNAL OF ELECTRONIC MATERIALS Vol.47 No.9(2018):5019-5024. |
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