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Effect of Germanium Doping on the Production and Evolution of Divacancy Complexes in Neutron Irradiated Czochralski Silicon
Dong, Peng; Yang, Ping; Yu, Xuegong; Chen, Lin; Ma, Yao; Li, Mo; Dai, Gang; Zhang, Jian
刊名JOURNAL OF ELECTRONIC MATERIALS
2018
卷号Vol.47 No.9页码:5019-5024
关键词Ge doping neutron irradiation divacancy complexes divacancy-oxygen complexes Czochralski silicon
ISSN号0361-5235
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/1869617
专题四川大学
作者单位1.China Acad Engn Phys, Inst Elect Engn, Mianyang 651999, Peoples R China
2.Zhejiang Univ, State Key Lab Si Mat, Hangzhou 310027, Zhejiang, Peoples R China
3.Sichuan Univ, Coll Phys Sci & Technol, Chengdu 610065, Sichuan, Peoples R China
4.China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Mianyang 651999, Peoples R China
5.Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
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GB/T 7714
Dong, Peng,Yang, Ping,Yu, Xuegong,et al. Effect of Germanium Doping on the Production and Evolution of Divacancy Complexes in Neutron Irradiated Czochralski Silicon[J]. JOURNAL OF ELECTRONIC MATERIALS,2018,Vol.47 No.9:5019-5024.
APA Dong, Peng.,Yang, Ping.,Yu, Xuegong.,Chen, Lin.,Ma, Yao.,...&Zhang, Jian.(2018).Effect of Germanium Doping on the Production and Evolution of Divacancy Complexes in Neutron Irradiated Czochralski Silicon.JOURNAL OF ELECTRONIC MATERIALS,Vol.47 No.9,5019-5024.
MLA Dong, Peng,et al."Effect of Germanium Doping on the Production and Evolution of Divacancy Complexes in Neutron Irradiated Czochralski Silicon".JOURNAL OF ELECTRONIC MATERIALS Vol.47 No.9(2018):5019-5024.
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