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	Growth of ZnGeP Single Crystal by Three-Temperature-Zone Furnace
	Zhao, X; Zhu, SF; Sun, YQ
刊名	Advanced Materials Research
	2011
卷号	Vol.179-180页码:945-948
关键词	Crystal Growth IR Transmission Temperature Field Distribution X-Ray Diffraction (XRD) ZnGeP2
ISSN号	1662-8985
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/1868796
专题	四川大学
作者单位	1.Nanjing Elect Devices Inst, Nanjing 210016, Peoples R China 2.Sichuan Univ, Sch Mat Sci & Engn, Chengdu 610039, Peoples R China 3.Civil Aviat Flight Univ China, Grad Dept, Guanghan 618307, Peoples R China
推荐引用方式 GB/T 7714	Zhao, X,Zhu, SF,Sun, YQ. Growth of ZnGeP Single Crystal by Three-Temperature-Zone Furnace[J]. Advanced Materials Research,2011,Vol.179-180:945-948.
APA	Zhao, X,Zhu, SF,&Sun, YQ.(2011).Growth of ZnGeP Single Crystal by Three-Temperature-Zone Furnace.Advanced Materials Research,Vol.179-180,945-948.
MLA	Zhao, X,et al."Growth of ZnGeP Single Crystal by Three-Temperature-Zone Furnace".Advanced Materials Research Vol.179-180(2011):945-948.

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