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	Effect of Sn Content in a CuSnZn Metal Precursor on Formation of MoSe Film during Selenization in Se+SnSe Vapor
	Liyong Yao; Jianping Ao*; Ming-Jer Jeng*; Jinlian Bi; Shoushuai Gao; Guozhong Sun; Qing He; Zhiqiang Zhou; Yun Sun and Liann-Be Chang
刊名	Materials
	2016
卷号	Vol.9 No.4页码:241
关键词	Cu2ZnSnSe4 solar cells selenization electrodeposited CuSnZn precursor MoSe2 Se+SnSex vapor
ISSN号	1996-1944
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/1864405
专题	南开大学
作者单位	1.Department of Electronic Engineering, Chang Gung University, Taoyuan City 33302, Taiwan 2.Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin film Devices and Technology, Nankai University, Tianjin 300071, China
推荐引用方式 GB/T 7714	Liyong Yao,Jianping Ao*,Ming-Jer Jeng*,et al. Effect of Sn Content in a CuSnZn Metal Precursor on Formation of MoSe Film during Selenization in Se+SnSe Vapor[J]. Materials,2016,Vol.9 No.4:241.
APA	Liyong Yao.,Jianping Ao*.,Ming-Jer Jeng*.,Jinlian Bi.,Shoushuai Gao.,...&Yun Sun and Liann-Be Chang.(2016).Effect of Sn Content in a CuSnZn Metal Precursor on Formation of MoSe Film during Selenization in Se+SnSe Vapor.Materials,Vol.9 No.4,241.
MLA	Liyong Yao,et al."Effect of Sn Content in a CuSnZn Metal Precursor on Formation of MoSe Film during Selenization in Se+SnSe Vapor".Materials Vol.9 No.4(2016):241.

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