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	Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiN interlayer grown on 6H-SiC substrate by metal–organic chemical vapor deposition
	Pengcheng Tao; Hongwei Liang; Dongsheng Wang; Xiaochuan Xia; Qiuju Feng; Yang Liu; Rensheng Shen; Kexiong Zhang; Yingmin Luo; Wenping Guo
刊名	Materials Science in Semiconductor Processing
	2014
卷号	Vol.27页码:841-845
关键词	Distributed Bragg reflectors Silicon carbide Ultraviolet Metal–organic chemical vapor deposition
ISSN号	1369-8001
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/1854582
专题	辽宁师范大学
作者单位	1.Jiangsu Xinguanglian Technology Co. Ltd., Wuxi 214192, China 2.a School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024, China 3.School of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029, China 4.State Key Laboratory on Integrated Optoelectronics, School of Electronic Science and Engineering, Jilin University, Changchun 130012, China
推荐引用方式 GB/T 7714	Pengcheng Tao,Hongwei Liang,Dongsheng Wang,et al. Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiN interlayer grown on 6H-SiC substrate by metal–organic chemical vapor deposition[J]. Materials Science in Semiconductor Processing,2014,Vol.27:841-845.
APA	Pengcheng Tao.,Hongwei Liang.,Dongsheng Wang.,Xiaochuan Xia.,Qiuju Feng.,...&Guotong Du.(2014).Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiN interlayer grown on 6H-SiC substrate by metal–organic chemical vapor deposition.Materials Science in Semiconductor Processing,Vol.27,841-845.
MLA	Pengcheng Tao,et al."Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiN interlayer grown on 6H-SiC substrate by metal–organic chemical vapor deposition".Materials Science in Semiconductor Processing Vol.27(2014):841-845.

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