High-peak power passively Q-switched 2-μm laser with MoS2saturable absorber

doi:10.1109/JSTQE.2016.2537980

	High-peak power passively Q-switched 2-μm laser with MoS2saturable absorber
	Luan, Chao 1; Zhang, Xiaoyan 2; Yang, Kejian 3; Zhao, Jia 1; Zhao, Shengzhi 1; Li, Tao 1; Qiao, Wenchao 1; Chu, Hongwei 1; Qiao, Junpeng 1; Wang, Jun 2
刊名	IEEE Journal of Selected Topics in Quantum Electronics
	2017
卷号	23 期号:1
ISSN号	07921233
DOI	10.1109/JSTQE.2016.2537980
英文摘要	The passive Q-switching characteristics of a diodepumped Tm,Ho:YAP laser at 2 μm based on a MoS2saturable absorber (SA) is presented for the first time. Pulses as short as 435 ns under a repetition rate of about 55 kHz were generated at the incident pump power of 8.4W, corresponding to the pulse peak power up to 11.3W. This is, to the best of our knowledge, the highest pulse peak power, ever obtained from MoS2based passively Q-switched 2-μm lasers. The experimental results sufficiently validated the feasibility of MoS2as SA for solid-state 2-μm lasers. © 2016 IEEE.
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/25471]
专题	中国科学院上海硅酸盐研究所
作者单位	1.School of Information Science and Engineering, Shandong Provincial Key Laboratory of Laser Technology and Application, Shandong University, Jinan; 250100, China; 2.Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai; 201800, China; 3.State Key laboratory of Crystal Material, Shandong Provincial Key Laboratory of Laser Technology and Application, School of Information Science and Engineering, Shandong University, Jinan; 250100, China; 4.Key Laboratory of Transparent and Opto-functional Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai; 200050, China; 5.Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou; 221116, China; 6.Institute for Advanced Study, School of Physics Science and Engineering, Tongji University, Shanghai; 200092, China
推荐引用方式 GB/T 7714	Luan, Chao,Zhang, Xiaoyan,Yang, Kejian,et al. High-peak power passively Q-switched 2-μm laser with MoS2saturable absorber[J]. IEEE Journal of Selected Topics in Quantum Electronics,2017,23(1).
APA	Luan, Chao.,Zhang, Xiaoyan.,Yang, Kejian.,Zhao, Jia.,Zhao, Shengzhi.,...&Xu, Jun.(2017).High-peak power passively Q-switched 2-μm laser with MoS2saturable absorber.IEEE Journal of Selected Topics in Quantum Electronics,23(1).
MLA	Luan, Chao,et al."High-peak power passively Q-switched 2-μm laser with MoS2saturable absorber".IEEE Journal of Selected Topics in Quantum Electronics 23.1(2017).