Fabrication and thermoelectric properties of Ga1-xInxSb compounds by solid reaction

doi:10.1016/j.ceramint.2018.08.193

	Fabrication and thermoelectric properties of Ga1-xInxSb compounds by solid reaction
	Yun, Shan 1; Guo, Tan 1; Li, Yanxing 1; Zhang, Jiadong 1; Li, Huaju 1; Chen, Jing 1; Kang, Litao 1; Huang, Aibin 2
刊名	Ceramics International
	2018
ISSN号	02728842
DOI	10.1016/j.ceramint.2018.08.193
英文摘要	III-V compounds with the zinc blende structure possess high carrier mobility and good power factors due to their unique crystal and electronic structure. In this work, In-doped GaSb (Ga1-xInxSb, x = 0, 0.02, 0.05, 0.1, 0.15, 0.2) were fabricated by combining melting method with SPS sintering technique. The microstructure and thermoelectric properties of Ga1-xInxSb compounds were systematically studied. Experimental results indicate that by introducing In into Ga sites, the lattice thermal conductivity has been effectively reduced by substituting Ga with In, resulting in a ZT value increases from 0.01 to 0.17 (600 K) when x = 0.02. However, further increase of In-doping dosage leads to the decrease of power factors, and therefore the decrease of ZT values. © 2018 Elsevier Ltd and Techna Group S.r.l.
出版者	Elsevier Ltd
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/25354]
专题	中国科学院上海硅酸盐研究所
作者单位	1.National & Local Joint Engineering Research Center for Deep Utilization Technology of Rock-salt Resource, Huaiyin Institute of Technology, Huai'an; 223003, China; 2.State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai institute of Ceramics, Chinese Academy of Sciences, Chengbei; Shanghai; 215, China
推荐引用方式 GB/T 7714	Yun, Shan,Guo, Tan,Li, Yanxing,et al. Fabrication and thermoelectric properties of Ga1-xInxSb compounds by solid reaction[J]. Ceramics International,2018.
APA	Yun, Shan.,Guo, Tan.,Li, Yanxing.,Zhang, Jiadong.,Li, Huaju.,...&Huang, Aibin.(2018).Fabrication and thermoelectric properties of Ga1-xInxSb compounds by solid reaction.Ceramics International.
MLA	Yun, Shan,et al."Fabrication and thermoelectric properties of Ga1-xInxSb compounds by solid reaction".Ceramics International (2018).