Growth and Dielectric Properties of Ta-Doped La2Ti2O7 Single Crystals

doi:10.3390/cryst8030113

	Growth and Dielectric Properties of Ta-Doped La2Ti2O7 Single Crystals
	Wang, Hui 1; Li, Qin 1; Wang, Chaoyue 1; He, Huan 1; Yu, Jianding 1; Xu, Jiayue
刊名	CRYSTALS
	2018
卷号	8 期号:3
关键词	Ta-LTO single crystal floating zone method dielectric properties oxygen vacancy
ISSN号	2073-4352
DOI	10.3390/cryst8030113
英文摘要	High-quality Ta-doped La2Ti2O7 (Ta-LTO) single crystal of about 40 mm in length and 5 mm in diameter was successfully prepared by the optical floating zone method. An X-ray rocking curve reveals that the crystal of LTO has excellent crystalline quality. As-grown crystals were transparent after annealing in air and the transmittance is up to 76% in the visible and near-infrared region. X-ray diffraction showed that this compound possessed a monoclinic structure with P2(1) space group. The dielectric properties were investigated as functions of temperature (0 similar to 300 degrees C) and frequency (10(2) Hz similar to 10(5) Hz). Dielectric spectra indicated an increase in the room-temperature dielectric constant accompanied by a drop in the loss tangent as a result of the Ta doping. One relaxation was observed in the spectra of electric modulus, which was ascribed to be related to the oxygen vacancy. The dielectric relaxation with activation energy of 1.16 eV is found to be the polaron hopping caused by the oxygen vacancies.
学科主题	Crystallography ; Materials Science, Multidisciplinary
出版者	MDPI
WOS记录号	WOS:000427705100006
资助机构	The work is supported by the Nature Science Foundation of China (51572175) and the International Cooperation Program of Chinese Academy of Sciences (Y35YQ1110G). ; The work is supported by the Nature Science Foundation of China (51572175) and the International Cooperation Program of Chinese Academy of Sciences (Y35YQ1110G).
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/25118]
专题	中国科学院上海硅酸盐研究所
作者单位	1.Shanghai Inst Technol, Sch Mat Sci & Engn, Shanghai 201418, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
推荐引用方式 GB/T 7714	Wang, Hui,Li, Qin,Wang, Chaoyue,et al. Growth and Dielectric Properties of Ta-Doped La2Ti2O7 Single Crystals[J]. CRYSTALS,2018,8(3).
APA	Wang, Hui,Li, Qin,Wang, Chaoyue,He, Huan,Yu, Jianding,&Xu, Jiayue.(2018).Growth and Dielectric Properties of Ta-Doped La2Ti2O7 Single Crystals.CRYSTALS,8(3).
MLA	Wang, Hui,et al."Growth and Dielectric Properties of Ta-Doped La2Ti2O7 Single Crystals".CRYSTALS 8.3(2018).