Epitaxial integration of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (111) thin films on GaN (0002) with La0.5Sr0.5CoO3/TiO2 buffer layers

doi:10.1016/j.matlet.2018.01.086

	Epitaxial integration of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (111) thin films on GaN (0002) with La0.5Sr0.5CoO3/TiO2 buffer layers
	Li, Guanjie 1; Li, Xiaomin ; Bi, Zhijie 1; Chen, Yongbo 1; Xu, Xiaoke 2
刊名	MATERIALS LETTERS
	2018
卷号	216 页码:224
关键词	Ferroelectrics Thin films Epitaxial growth PMN-PT GaN Physical vapour deposition
ISSN号	0167-577X
DOI	10.1016/j.matlet.2018.01.086
英文摘要	0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (PMN-PT) ferroelectric thin films were epitaxially integrated on GaN (0002) substrates by pulsed laser deposition. La0.5Sr0.5CoO3 (LSCO)/TiO2 buffer layers are designed to decrease the lattice mismatch between PMN-PT and GaN, which promotes the epitaxial growth of pure perovskite PMN-PT (111) thin films. Meanwhile, LSCO/TiO2 heterostructures could be served as the bottom electrodes for integrated ferroelectric devices. Epitaxial relationship of the multilayer is determined to be (111) [1 (1) over bar0] PMN-PT//(111) [1 (1) over bar0]LSCO//(100)[001] TiO2//(0002) [11 (2) over bar0] GaN. The integrated PMN-PT (111) films exhibit good ferroelectric and dielectric properties with remanent polarization of 11.3 mu C/cm(2), coercive field of 34.1 kV/cm at 100 Hz, dielectric constant of 2035 and dielectric tunability of 68.1% at 1 kHz, which make it a potential candidate for the applications in GaN-based integrated ferroelectric devices. (C) 2018 Elsevier B.V. All rights reserved.
学科主题	Materials Science, Multidisciplinary ; Physics, Applied
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000424713000060
资助机构	This work was supported by the National Key R&D Program of China (No. 2016YFA0201103), the National Natural Science Foundation of China (No. 51572280 and 51602329), and the Foundation of the Shanghai Committee for Science and Technology (No. 15JC1403600). ; This work was supported by the National Key R&D Program of China (No. 2016YFA0201103), the National Natural Science Foundation of China (No. 51572280 and 51602329), and the Foundation of the Shanghai Committee for Science and Technology (No. 15JC1403600).
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/25073]
专题	中国科学院上海硅酸盐研究所
作者单位	1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Dingxi Rd, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China 3.Shanghai Inst Technol, Sch Mat Sci & Engn, 100 Haiquan Rd, Shanghai 201418, Peoples R China
推荐引用方式 GB/T 7714	Li, Guanjie,Li, Xiaomin,Bi, Zhijie,et al. Epitaxial integration of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (111) thin films on GaN (0002) with La0.5Sr0.5CoO3/TiO2 buffer layers[J]. MATERIALS LETTERS,2018,216:224, 227.
APA	Li, Guanjie,Li, Xiaomin,Bi, Zhijie,Chen, Yongbo,&Xu, Xiaoke.(2018).Epitaxial integration of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (111) thin films on GaN (0002) with La0.5Sr0.5CoO3/TiO2 buffer layers.MATERIALS LETTERS,216,224.
MLA	Li, Guanjie,et al."Epitaxial integration of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (111) thin films on GaN (0002) with La0.5Sr0.5CoO3/TiO2 buffer layers".MATERIALS LETTERS 216(2018):224.