Strong correlation between B-Al-N doping concentration fluctuation and photoluminescence effects of f-SiC

doi:10.1063/1.5044492

	Strong correlation between B-Al-N doping concentration fluctuation and photoluminescence effects of f-SiC
	Zhuo, Shi-Yi ; Liu, Xue-Chao ; Xu, Ting-Xiang ; Yan, Cheng-Feng ; Shi, Er-Wei
刊名	AIP ADVANCES
	2018
卷号	8 期号:7
ISSN号	2158-3226
DOI	10.1063/1.5044492
英文摘要	This paper report the relationship between B-Al-N doping concentration fluctuation and photoluminescence effects of fluorescent 4H-SiC single crystals. The photoluminescence emission properties, dopant concentration, and internal quantum efficiency of B, Al and N co-doped 4H-SiC are characterized. It is found that the emission spectra exhibit a wide band that covers from about 450 nm to 750 nm. The peak intensity of the emission spectra is strongly affected by B, Al and N concentrations. By further analyses the roles of B-Al-N dopants, a hypothetical formula is proposed, which can help to profile the strong correlation between photoluminescence effects and B-Al-N doping concentrations. (C) 2018 Author(s).
学科主题	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
出版者	AMER INST PHYSICS
WOS记录号	WOS:000440602300061
资助机构	This work was supported by The Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51602331), National Key Research and Development Program of China (Grant No. 2017YFB0405700), National Key Research and Development Program of China (Grant No. 2016YFB0400400) and Shanghai Science and Technology Innovation Action Plan Program (Grant No. 17511106200). ; This work was supported by The Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51602331), National Key Research and Development Program of China (Grant No. 2017YFB0405700), National Key Research and Development Program of China (Grant No. 2016YFB0400400) and Shanghai Science and Technology Innovation Action Plan Program (Grant No. 17511106200).
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/24831]
专题	中国科学院上海硅酸盐研究所
作者单位	1.[Zhuo, Shi-Yi 2.Liu, Xue-Chao 3.Xu, Ting-Xiang 4.Yan, Cheng-Feng 5.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201899, Peoples R China 6.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Zhuo, Shi-Yi,Liu, Xue-Chao,Xu, Ting-Xiang,et al. Strong correlation between B-Al-N doping concentration fluctuation and photoluminescence effects of f-SiC[J]. AIP ADVANCES,2018,8(7).
APA	Zhuo, Shi-Yi,Liu, Xue-Chao,Xu, Ting-Xiang,Yan, Cheng-Feng,&Shi, Er-Wei.(2018).Strong correlation between B-Al-N doping concentration fluctuation and photoluminescence effects of f-SiC.AIP ADVANCES,8(7).
MLA	Zhuo, Shi-Yi,et al."Strong correlation between B-Al-N doping concentration fluctuation and photoluminescence effects of f-SiC".AIP ADVANCES 8.7(2018).