Preparation and electrical properties of a new-type intergrowth bismuth layer-structured (Bi3TiNbO9)(1)(Bi4Ti3O12)(2) ceramics

doi:10.1016/j.jallcom.2018.04.134

	Preparation and electrical properties of a new-type intergrowth bismuth layer-structured (Bi3TiNbO9)(1)(Bi4Ti3O12)(2) ceramics
	Zhang, Faqiang ; Wahyudi, Olivia ; Liu, Zhifu ; Gu, Hui 1; Li, Yongxiang 2
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2018
卷号	753 页码:54
关键词	Abnormal intergrowth structure High temperature piezoelectrics Bismuth-layered ferroelectrics Bi3TiNbO9 Bi4Ti3O12
ISSN号	0925-8388
DOI	10.1016/j.jallcom.2018.04.134
英文摘要	We firstly report an abnormal intergrowth bismuth layer-structured phase, (Bi3TiNbO9)(1)(Bi4Ti3O12)(2), or BTN1BiT2, with non-equal parent blocks. The HRTEM analysis shows that such compound has a longrange-ordered -233- sequence. The crystal structure has been solved in orthorhombic space group A2(1)am with a = 5.458 angstrom, b = 5.415 angstrom and c = 91.03 angstrom. Double dielectric peaks at 668 degrees C and 760 degrees C were observed. The thermal stable piezoelectric activity of d(33) = 11.6-13.6 pC/N up to 600 degrees C suggests that the BTN1BiT2 ceramic is a good candidate for piezoelectric device using in high temperature. This work indicates the universality of such abnormal structures and it will obviously expand Aurivillius family for future applications. (C) 2018 Elsevier B.V. All rights reserved.
学科主题	Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
出版者	ELSEVIER SCIENCE SA
WOS记录号	WOS:000432674100009
资助机构	The authors would like to acknowledge the support by the National Natural Science Foundation of China (No. 51172257, No. 51502325), and the Ministry of Science and Technology of China through 973-Project (2015CB654604, 2015CB654605). ; The authors would like to acknowledge the support by the National Natural Science Foundation of China (No. 51172257, No. 51502325), and the Ministry of Science and Technology of China through 973-Project (2015CB654604, 2015CB654605).
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/24813]
专题	中国科学院上海硅酸盐研究所
作者单位	1.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China 2.Shanghai Univ, Mat Genome Inst, Shanghai 200444, Peoples R China 3.RMIT Univ, Sch Engn, Melbourne, Vic 3001, Australia
推荐引用方式 GB/T 7714	Zhang, Faqiang,Wahyudi, Olivia,Liu, Zhifu,et al. Preparation and electrical properties of a new-type intergrowth bismuth layer-structured (Bi3TiNbO9)(1)(Bi4Ti3O12)(2) ceramics[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2018,753:54, 59.
APA	Zhang, Faqiang,Wahyudi, Olivia,Liu, Zhifu,Gu, Hui,&Li, Yongxiang.(2018).Preparation and electrical properties of a new-type intergrowth bismuth layer-structured (Bi3TiNbO9)(1)(Bi4Ti3O12)(2) ceramics.JOURNAL OF ALLOYS AND COMPOUNDS,753,54.
MLA	Zhang, Faqiang,et al."Preparation and electrical properties of a new-type intergrowth bismuth layer-structured (Bi3TiNbO9)(1)(Bi4Ti3O12)(2) ceramics".JOURNAL OF ALLOYS AND COMPOUNDS 753(2018):54.