Dependence of Ion-Implant-Induced LBIC Novel Characteristic on Excitation Intensity for Long-Wavelength HgCdTe-Based Photovoltaic Infrared Detector Pixel Arrays

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	Dependence of Ion-Implant-Induced LBIC Novel Characteristic on Excitation Intensity for Long-Wavelength HgCdTe-Based Photovoltaic Infrared Detector Pixel Arrays
	Wei-DaHu; Xiao-ShuangChen; Zhen-HuaYe; A-LiFeng; FeiYin; BoZhang; LeiLiao; WeiLu
刊名	IEEE J SEL TOP QUANT
	2013
卷号	19 期号:5
关键词	Laserbeaminducedcurrent Hgcdtelongwave Infrareddetector Junctiontransformation Devicesimulation
英文摘要	In this paper, experimental results of laserirradiance-dependent polarity inversion of laser beam induced current (LBIC) for As-doped long-wavelength HgCdTe pixel arrays grown on CdZnTe are reported. Models for the ion-implantinduced junction transformation are proposed, and demonstrated using numerical simulations. The novel trap-related p-n junction transformation induced by ion implantation is observed under typical laser irradiances for low temperature. The implantation induced traps and Hg interstitial diffusion are key factors for inducing the LBIC coupling, polarity reversion, and junction broadening at different laser irradiances. The trap type, trap density, and junction configuration are extracted from the measured experiment data. The results provide the near room-temperature HgCdTe photovoltaic detector with a reliable reference on the junction reversion and broadening around implanted regions, as well as controlling the n-on-p junction formation for very long wavelength HgCdTe infrared detector pixels.
学科主题	红外基础研究
公开日期	2014-11-10
内容类型	期刊论文
源URL	[http://202.127.1.142/handle/181331/7702]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	Wei-DaHu,Xiao-ShuangChen,Zhen-HuaYe,et al. Dependence of Ion-Implant-Induced LBIC Novel Characteristic on Excitation Intensity for Long-Wavelength HgCdTe-Based Photovoltaic Infrared Detector Pixel Arrays[J]. IEEE J SEL TOP QUANT,2013,19(5).
APA	Wei-DaHu.,Xiao-ShuangChen.,Zhen-HuaYe.,A-LiFeng.,FeiYin.,...&WeiLu.(2013).Dependence of Ion-Implant-Induced LBIC Novel Characteristic on Excitation Intensity for Long-Wavelength HgCdTe-Based Photovoltaic Infrared Detector Pixel Arrays.IEEE J SEL TOP QUANT,19(5).
MLA	Wei-DaHu,et al."Dependence of Ion-Implant-Induced LBIC Novel Characteristic on Excitation Intensity for Long-Wavelength HgCdTe-Based Photovoltaic Infrared Detector Pixel Arrays".IEEE J SEL TOP QUANT 19.5(2013).