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	Large Format High SNR SWIR HgCdTe/Si FPA With Multiple-choice Gain for Hyperspectral Detection
	Hu XN; Huang AB; Liao QJ; Chen L; Chen X; Fan H; Chen HL; Ding RJ; He L; Sun DX
	2017
关键词	hyperspectral detection SWIR HgCdTe/Si FPA stress-release multiple-choice gain signal to Noise Ratio
DOI	10.1117/12.2262912
英文摘要	This paper reports the development of 2000x256 format SWIR HgCdTe/Si FPA with multiple-choice gain (i.e. multiple-choice charge handling capacity) for hyperspectral detection. The spectral resolution is about 8nm. To meet the demands of variable low flux detection within each spectral band in the short wave infrared range low dark current low noise variable conversion gains and high SNR (Signal to Noise Ratio) of FPA are needed. In this paper we fabricate 512x512 pixel 30 mu m pitch SWIR HgCdTe diode array on Si by using a novel stress-release construction of HgCdTe chip on Si. Moreover we design low noise variable conversion gain and large dynamic range read-out integrated circuit (ROIC) and hybridized the ROIC on the HgCdTe diode array on Si substrate. There are 8-choice gains which can be selected locally according to the incident flux to meet high SNR detection demand. By high-accuracy splicing 4 512x512 HgCdTe/Si FPA we get mosaic 2000x512 FPA and characterizations have been carried out and reveal that the array dark current densities on an order of 10(-10) A/cm(2) quantum efficiency exceeding 70% and the operability of 99.5% at operating temperature of around 110K. The SNR of this FPA achieved 120 when illuminated under 5x10(4) photons/pixel.
语种	英语
内容类型	会议论文
源URL	[http://202.127.2.71:8080/handle/181331/12093]
专题	上海技术物理研究所_上海技物所
作者单位	Shanghai Inst Tech Phys
推荐引用方式 GB/T 7714	Hu XN,Huang AB,Liao QJ,et al. Large Format High SNR SWIR HgCdTe/Si FPA With Multiple-choice Gain for Hyperspectral Detection[C]. 见:.

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