Effects of an anodic oxide passivation layer on mesa-type InGaAs (PIN) photodetectors

	Effects of an anodic oxide passivation layer on mesa-type InGaAs (PIN) photodetectors
	Zhang KF(张可锋)
刊名	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
	2009
卷号	24 页码:15008
学科主题	红外探测器材料与器件
语种	中文
WOS记录号	WOS:000261761500008
公开日期	2011-07-14
内容类型	期刊论文
源URL	[http://202.127.1.142/handle/181331/1629]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	Zhang KF. Effects of an anodic oxide passivation layer on mesa-type InGaAs (PIN) photodetectors[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2009,24:15008.
APA	张可锋.(2009).Effects of an anodic oxide passivation layer on mesa-type InGaAs (PIN) photodetectors.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,24,15008.
MLA	张可锋."Effects of an anodic oxide passivation layer on mesa-type InGaAs (PIN) photodetectors".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 24(2009):15008.