The dependence of InGaAs photodetectors' performance on area and perimeter of the PN junction

	The dependence of InGaAs photodetectors' performance on area and perimeter of the PN junction
	Zhang KF(张可锋)
刊名	Guangdianzi Jiguang/Journal of Optoelectronics Laser
	2009
卷号	20 期号:6 页码:713-716
学科主题	红外探测器材料与器件
语种	英语
公开日期	2011-07-14
内容类型	期刊论文
源URL	[http://202.127.1.142/handle/181331/1625]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	Zhang KF. The dependence of InGaAs photodetectors' performance on area and perimeter of the PN junction[J]. Guangdianzi Jiguang/Journal of Optoelectronics Laser,2009,20(6):713-716.
APA	张可锋.(2009).The dependence of InGaAs photodetectors' performance on area and perimeter of the PN junction.Guangdianzi Jiguang/Journal of Optoelectronics Laser,20(6),713-716.
MLA	张可锋."The dependence of InGaAs photodetectors' performance on area and perimeter of the PN junction".Guangdianzi Jiguang/Journal of Optoelectronics Laser 20.6(2009):713-716.