Study of the ohmic contacts of n-type InP in InGaAs mesa detectors

	Study of the ohmic contacts of n-type InP in InGaAs mesa detectors
	Wang Y(汪洋)
刊名	Guangxue Xuebao/Acta Optica Sinica
	2009
卷号	29 页码:374-376
学科主题	红外探测器材料与器件
语种	中文
公开日期	2011-07-14
内容类型	期刊论文
源URL	[http://202.127.1.142/handle/181331/1611]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	Wang Y. Study of the ohmic contacts of n-type InP in InGaAs mesa detectors[J]. Guangxue Xuebao/Acta Optica Sinica,2009,29:374-376.
APA	汪洋.(2009).Study of the ohmic contacts of n-type InP in InGaAs mesa detectors.Guangxue Xuebao/Acta Optica Sinica,29,374-376.
MLA	汪洋."Study of the ohmic contacts of n-type InP in InGaAs mesa detectors".Guangxue Xuebao/Acta Optica Sinica 29(2009):374-376.