Physical Properties of Al-doped ZnO and Ga-doped ZnO Thin Films Prepared by Direct Current Sputtering at Room Temperature

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	Physical Properties of Al-doped ZnO and Ga-doped ZnO Thin Films Prepared by Direct Current Sputtering at Room Temperature
	Ke, Zhu; Weijie, Song; Jia, Li; Ye, Yang
刊名	JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION
	2017
卷号	32 期号:1 页码:85-88
ISSN号	1000-2413
英文摘要	Al-doped zinc oxide ( AZO) and Ga-doped zinc oxide ( GZO) thin films with the same doping concentration ( 3.6 at%) were deposited on glass substrates at room temperature by direct current ( DC) magnetron sputtering. Consequently, we comparatively studied the doped thin films on the basis of their structural, morphological, electrical, and optical properties for optoelectronic applications. Both thin films exhibited excellent optical properties with more than 85% transmission in the visible range. The GZO thin film had better crystallinity and smoother surface morphology than the AZO thin film. The conductivity of the GZO thin film was improved compared to that of the AZO thin film: the resistivity decreased from 1.01 x 10(-3) to 3.5 x 10(-4) Omega cm, which was mostly due to the increase of the carrier concentration from 6.5 x10(20) to 1.46 x 10(21) cm(-3). These results revealed that the GZO thin film had higher quality than the AZO thin film with the same doping concentration for optoelectronic applications.
公开日期	2017-12-25
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/14013]
专题	2017专题
推荐引用方式 GB/T 7714	Ke, Zhu,Weijie, Song,Jia, Li,et al. Physical Properties of Al-doped ZnO and Ga-doped ZnO Thin Films Prepared by Direct Current Sputtering at Room Temperature[J]. JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION,2017,32(1):85-88.
APA	Ke, Zhu,Weijie, Song,Jia, Li,&Ye, Yang.(2017).Physical Properties of Al-doped ZnO and Ga-doped ZnO Thin Films Prepared by Direct Current Sputtering at Room Temperature.JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION,32(1),85-88.
MLA	Ke, Zhu,et al."Physical Properties of Al-doped ZnO and Ga-doped ZnO Thin Films Prepared by Direct Current Sputtering at Room Temperature".JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION 32.1(2017):85-88.