Carrier trapping anisotropy in ambipolar SnO thin-film transistors

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 2017专题

	Carrier trapping anisotropy in ambipolar SnO thin-film transistors
	Liang, Lingyan; Luo, Hao; Cao, Hongtao
刊名	SOLID-STATE ELECTRONICS
	2017
卷号	129 页码:88-92
ISSN号	0038-1101
英文摘要	The anisotropic carrier trapping behaviors was demonstrated for ambipolar tin monoxide (SnO) thin-film transistors (TFTs). On one hand, the TFTs exhibited good stability with almost no changes in transfer characteristics under negative gate-bias stress (NGBS). On the other, under positive gate-bias stress (PGBS), the transfer curves presented parallel and positive shift with no degradation in field-effect mobility and subthreshold voltage swing. The stress-time evolution of the turn-on voltage shift, induced by different positive stress voltages and temperatures, could be described by the stretched exponential model. The relaxation time was extracted to be 1.6 X 10(4) s at room temperature with activation energy of 0.43 eV, indicating that the ambipolar SnO TFTs under PGBS approach the stability of amorphous indium-gallium-zinc oxide based TFTs. (C) 2017 Elsevier Ltd. All rights reserved.
公开日期	2017-12-25
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/13960]
专题	2017专题
推荐引用方式 GB/T 7714	Liang, Lingyan,Luo, Hao,Cao, Hongtao. Carrier trapping anisotropy in ambipolar SnO thin-film transistors[J]. SOLID-STATE ELECTRONICS,2017,129:88-92.
APA	Liang, Lingyan,Luo, Hao,&Cao, Hongtao.(2017).Carrier trapping anisotropy in ambipolar SnO thin-film transistors.SOLID-STATE ELECTRONICS,129,88-92.
MLA	Liang, Lingyan,et al."Carrier trapping anisotropy in ambipolar SnO thin-film transistors".SOLID-STATE ELECTRONICS 129(2017):88-92.