The same batch enabled threshold voltage tuning for vertically- or laterally-gated transparent InZnO thin-film transistors

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	The same batch enabled threshold voltage tuning for vertically- or laterally-gated transparent InZnO thin-film transistors
	Cao, Hongtao; Liang, Lingyan; Gao, Junhua; Zhuge, Fei; Zhou, Jumei; Zhang, Lili; Li, Long; Zhang, Hongliang
刊名	PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
	2017
卷号	214 期号:6 页码:UNSP 1600918
ISSN号	1862-6300
英文摘要	Fully transparent InZnO thin-film transistors (TFTs), with either a bottom gate or an in-plane gate device structure, were fabricated using the solution-processed SA proton conducting films as gate dielectrics. The self-assembled InZnO channel with different thickness by the gradient shadow mask was fabricated during the same batch radio-frequency magnetron sputtering. The threshold voltage can be modulated from -0.25 to +0.12V and from -0.07 to +0.25V by the channel layer thickness variations for the vertically-coupled and laterally-coupled InZnO TFTs, respectively. Accordingly, these InZnO TFTs can operate in either depletion or enhancement mode on the same chip. A general expression of the turn-on voltage in relation to the channel thickness is derived. The device performance with an on/off current ratio of 1.5x10(6), a subthreshold swing of down to 70mV/decade, and a field-effect mobility of up to 34.3cm(2)/Vs is exhibited. Our results demonstrate that the same batch channel processing is potentially applied in logic circuits or functional electronics.
公开日期	2017-12-25
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/13809]
专题	2017专题
推荐引用方式 GB/T 7714	Cao, Hongtao,Liang, Lingyan,Gao, Junhua,et al. The same batch enabled threshold voltage tuning for vertically- or laterally-gated transparent InZnO thin-film transistors[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2017,214(6):UNSP 1600918.
APA	Cao, Hongtao.,Liang, Lingyan.,Gao, Junhua.,Zhuge, Fei.,Zhou, Jumei.,...&Zhang, Hongliang.(2017).The same batch enabled threshold voltage tuning for vertically- or laterally-gated transparent InZnO thin-film transistors.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,214(6),UNSP 1600918.
MLA	Cao, Hongtao,et al."The same batch enabled threshold voltage tuning for vertically- or laterally-gated transparent InZnO thin-film transistors".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 214.6(2017):UNSP 1600918.