| Photoelectrochemical etching of gallium nitride surface by complexation dissolution mechanism | |
| Zhang, Miao-Rong; Hou, Fei; Wang, Zu-Gang; Zhang, Shao-Hui; Pan, Ge-Bo（潘革波）; Pan GB(潘革波) | |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 2017 | |
| 语种 | 英语 |
| 内容类型 | 期刊论文 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/5558]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_学科交叉综合研究部_潘革波团队 |
| 通讯作者 | Pan GB(潘革波) |
| 推荐引用方式 GB/T 7714 | Zhang, Miao-Rong,Hou, Fei,Wang, Zu-Gang,et al. Photoelectrochemical etching of gallium nitride surface by complexation dissolution mechanism[J]. APPLIED SURFACE SCIENCE,2017. |
| APA | Zhang, Miao-Rong,Hou, Fei,Wang, Zu-Gang,Zhang, Shao-Hui,Pan, Ge-Bo,&潘革波.(2017).Photoelectrochemical etching of gallium nitride surface by complexation dissolution mechanism.APPLIED SURFACE SCIENCE. |
| MLA | Zhang, Miao-Rong,et al."Photoelectrochemical etching of gallium nitride surface by complexation dissolution mechanism".APPLIED SURFACE SCIENCE (2017). |
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