The influence of Sb content and dots size of InAs/GaAs(1-x)Sbx quantum dot on type I-type II band alignment and carrier dynamics

	The influence of Sb content and dots size of InAs/GaAs(1-x)Sbx quantum dot on type I-type II band alignment and carrier dynamics
	Li, Yaqian; Ji, Lian; Lu, Shulong（陆书龙）; Ding, Chao; Zhou, Jianqiu
刊名	JOURNAL OF APPLIED PHYSICS
	2017
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/5655]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队
推荐引用方式 GB/T 7714	Li, Yaqian,Ji, Lian,Lu, Shulong,et al. The influence of Sb content and dots size of InAs/GaAs(1-x)Sbx quantum dot on type I-type II band alignment and carrier dynamics[J]. JOURNAL OF APPLIED PHYSICS,2017.
APA	Li, Yaqian,Ji, Lian,Lu, Shulong,Ding, Chao,&Zhou, Jianqiu.(2017).The influence of Sb content and dots size of InAs/GaAs(1-x)Sbx quantum dot on type I-type II band alignment and carrier dynamics.JOURNAL OF APPLIED PHYSICS.
MLA	Li, Yaqian,et al."The influence of Sb content and dots size of InAs/GaAs(1-x)Sbx quantum dot on type I-type II band alignment and carrier dynamics".JOURNAL OF APPLIED PHYSICS (2017).