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	Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3
	Yang, J.; Zhao, D. G.; Jiang, D. S.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Liu, W.; Liang, F.; Li, X.; Liu, S. T.
刊名	SUPERLATTICES AND MICROSTRUCTURES
	2017
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/5473]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Yang, J.,Zhao, D. G.,Jiang, D. S.,et al. Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3[J]. SUPERLATTICES AND MICROSTRUCTURES,2017.
APA	Yang, J..,Zhao, D. G..,Jiang, D. S..,Chen, P..,Zhu, J. J..,...&Yang, H..(2017).Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3.SUPERLATTICES AND MICROSTRUCTURES.
MLA	Yang, J.,et al."Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3".SUPERLATTICES AND MICROSTRUCTURES (2017).

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