Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes

	Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes
	Yang, Jing; Zhao, Degang; Jiang, Desheng; Chen, Ping; Zhu, Jianjun; Liu, Zongshun; Li, Xiang; Liang, Feng; Liu, Wei; Liu, Shuangtao
刊名	IEEE PHOTONICS JOURNAL
	2017
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/5551]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Yang, Jing,Zhao, Degang,Jiang, Desheng,et al. Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes[J]. IEEE PHOTONICS JOURNAL,2017.
APA	Yang, Jing.,Zhao, Degang.,Jiang, Desheng.,Chen, Ping.,Zhu, Jianjun.,...&Li, Mo.(2017).Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes.IEEE PHOTONICS JOURNAL.
MLA	Yang, Jing,et al."Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes".IEEE PHOTONICS JOURNAL (2017).