The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device

	The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device
	Ji, Lian（季莲）; Tan, Ming（谭明）; Ding, Chao; Honda, Kazuki; Harasawa, Ryo; Yasue, Yuya; Wu, Yuanyuan; Dai, Pan（代盼）; Tackeuchi, Atsushi; Bian, Lifeng（边历峰）
刊名	JOURNAL OF CRYSTAL GROWTH
	2017
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/5658]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
通讯作者	Lu SL(陆书龙)
推荐引用方式 GB/T 7714	Ji, Lian,Tan, Ming,Ding, Chao,et al. The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device[J]. JOURNAL OF CRYSTAL GROWTH,2017.
APA	Ji, Lian.,Tan, Ming.,Ding, Chao.,Honda, Kazuki.,Harasawa, Ryo.,...&陆书龙.(2017).The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device.JOURNAL OF CRYSTAL GROWTH.
MLA	Ji, Lian,et al."The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device".JOURNAL OF CRYSTAL GROWTH (2017).