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	High-performance AlGaN/GaN MIS-HEMT device based on in situ plasma nitriding and low power chemical vapor deposition Si3N4gate dielectrics
	Li, Shu-Ping; Zhang, Zhi-Li(张志利）; Fu, Kai(付凯); Yu, Guo-Hao(于国浩); Cai, Yong(蔡勇); Zhang, Bao-Shun(张宝顺); Zhang BS(张宝顺)
	2017
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/5446]
专题	苏州纳米技术与纳米仿生研究所_纳米加工公共平台
通讯作者	Zhang BS(张宝顺)
推荐引用方式 GB/T 7714	Li, Shu-Ping,Zhang, Zhi-Li,Fu, Kai,et al. High-performance AlGaN/GaN MIS-HEMT device based on in situ plasma nitriding and low power chemical vapor deposition Si3N4gate dielectrics[J],2017.
APA	Li, Shu-Ping.,Zhang, Zhi-Li.,Fu, Kai.,Yu, Guo-Hao.,Cai, Yong.,...&张宝顺.(2017).High-performance AlGaN/GaN MIS-HEMT device based on in situ plasma nitriding and low power chemical vapor deposition Si3N4gate dielectrics..
MLA	Li, Shu-Ping,et al."High-performance AlGaN/GaN MIS-HEMT device based on in situ plasma nitriding and low power chemical vapor deposition Si3N4gate dielectrics".(2017).

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