Inverted structural quantum dot light-emitting diodes based on Al-doped ZnO electrode

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	Inverted structural quantum dot light-emitting diodes based on Al-doped ZnO electrode
	Tang, Z. B.; J. Lin; L. S. Wang; J. S. Luo; J. L. Zhao; H. B. Li; Y. J. Wang and X. Y. Liu
刊名	Nanotechnology
	2017
卷号	28 期号:36
英文摘要	As an indium-free transparent conducting film, Al-doped zinc oxide (AZO) was prepared by magnetron sputtering technique, exhibiting good electrical, optical and surface characteristics. UPS/XPS measurements show that AZO and zinc oxide nanoparticles (ZnO NPs) have matched energy level that can facilitate the electron injection from AZO to ZnO NPs. Inverted structural green quantum dot light-emitting diodes based on AZO cathode were fabricated, which exhibits a maximum luminance up to 178 000 cd m(-2), and a maximum current efficiency of 10.1 cd A(-1). Therewith, combined with the simulated space-charge-limited current (SCLC) theory, the measured current density-voltage characteristics of charge-only devices were analyzed. It demonstrated that AZO and ZnO NPs had much better electron injection efficiency than ITO, showing a electron injection efficiency close to 100%. By studying the relationship between the electric field and the current density, the measured curve of AZO-based devices nearly fits the theoretical curve of SCLC and the AZO electrode has a better ohmic contact with ZnO NPs than ITO.
语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/59214]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Tang, Z. B.,J. Lin,L. S. Wang,et al. Inverted structural quantum dot light-emitting diodes based on Al-doped ZnO electrode[J]. Nanotechnology,2017,28(36).
APA	Tang, Z. B..,J. Lin.,L. S. Wang.,J. S. Luo.,J. L. Zhao.,...&Y. J. Wang and X. Y. Liu.(2017).Inverted structural quantum dot light-emitting diodes based on Al-doped ZnO electrode.Nanotechnology,28(36).
MLA	Tang, Z. B.,et al."Inverted structural quantum dot light-emitting diodes based on Al-doped ZnO electrode".Nanotechnology 28.36(2017).