Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film

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	Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film
	Ning, H. L.; X. Z. Liu; H. K. Zhang; Z. Q. Fang; W. Cai; J. Q. Chen; R. H. Yao; M. Xu; L. Wang; L. F. Lan
刊名	Materials
	2017
卷号	10 期号:1
英文摘要	The effect of intrinsic stress on the structure and physical properties of silicon-tin-oxide (STO) films have been investigated. Since a state of tensile stress is available in as-deposited films, the value of stress can be exponentially enhanced when the annealing temperature is increased. The tensile stress is able to not only suppress the crystallization and widen the optical band gap of STO films, but also reduce defects of STO films. In this report, the good electrical performance of STO thin-film transistors (TFTs) can be obtained when annealing temperature is 450 degrees C. This includes a value of saturation mobility that can be reached at 6.7 cm(2)/Vs, a ratio of I-on/I-off as 7.34 x 107, a steep sub-threshold swing at 0.625 V/decade, and a low trap density of 7.96 x 1011 eV(-1).cm(-2), respectively.
语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/59145]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Ning, H. L.,X. Z. Liu,H. K. Zhang,et al. Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film[J]. Materials,2017,10(1).
APA	Ning, H. L..,X. Z. Liu.,H. K. Zhang.,Z. Q. Fang.,W. Cai.,...&X. F. Wang and Z. C. Zhang.(2017).Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film.Materials,10(1).
MLA	Ning, H. L.,et al."Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film".Materials 10.1(2017).