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Characterization of Mg and Fe doped Sb2Se3 thin films for photovoltaic application
Li, Yang1,2,3; Zhou, Ying1,2,3; Zhu, Yining1,2; Chen, Chao1,2,3; Luo, Jiajun1,2,3; Ma, Jingyuan4; Yang, Bo1,2,3; Wang, Xiaojie1,2; Xia, Zhe1,2,3; Tang, Jiang1,2,3
刊名APPLIED PHYSICS LETTERS
2016-12-05
卷号109期号:23
英文摘要Sb2Se3 holds a great potential for low-cost thin film photovoltaics because of its very attractive material and optoelectronic properties, and the demonstrated 5.6% certified efficiency and decent device stability. A full understanding of the influence of external impurities on the properties of Sb2Se3 films would help the further improvement of Sb2Se3 solar cells. In this work, we carefully characterized the Mg and Fe doping in Sb2Se3 films. Both Kelvin probe force microscope and Hall measurements revealed that Mg was largely inert while Fe introduced the n-type doping. Temperature-dependent conductivity and admittance further demonstrated that Fe doping introduced two defect levels within the bandgap with their positions similar to 0.3 eV and similar to 0.4 eV below the conduction band. We caution that iron contamination should be minimized for high efficiency Sb(2)Se3 solar cells. Published by AIP Publishing.
语种英语
内容类型期刊论文
源URL[http://ir.iccas.ac.cn/handle/121111/37985]  
专题化学研究所_其它
作者单位1.HUST, WNLO, Wuhan 430074, Peoples R China
2.HUST, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
3.Huazhong Univ Sci & Technol, Shenzhen R&D Ctr, Shenzhen 518000, Peoples R China
4.Chinese Acad Sci, Beijing Inst Chem, Beijing 100190, Peoples R China
推荐引用方式
GB/T 7714
Li, Yang,Zhou, Ying,Zhu, Yining,et al. Characterization of Mg and Fe doped Sb2Se3 thin films for photovoltaic application[J]. APPLIED PHYSICS LETTERS,2016,109(23).
APA Li, Yang.,Zhou, Ying.,Zhu, Yining.,Chen, Chao.,Luo, Jiajun.,...&Tang, Jiang.(2016).Characterization of Mg and Fe doped Sb2Se3 thin films for photovoltaic application.APPLIED PHYSICS LETTERS,109(23).
MLA Li, Yang,et al."Characterization of Mg and Fe doped Sb2Se3 thin films for photovoltaic application".APPLIED PHYSICS LETTERS 109.23(2016).
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