Etching-Controlled Growth of Graphene by Chemical Vapor Deposition | |
Luo, Birong1; Gao, Enlai2,3; Geng, Dechao1; Wang, Huaping1; Xu, Zhiping2,3; Yu, Gui1,4 | |
刊名 | CHEMISTRY OF MATERIALS
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2017-02-14 | |
卷号 | 29期号:3页码:1022-1027 |
英文摘要 | Graphene growth and etching are reciprocal processes that can reach a dynamic balance during chemical vapor deposition (CVD). Most commonly, the growth of graphene is the dominate process, while the etching of graphene is a recessive process often neglected during CVD growth of graphene. We show here that through the rational design of low-pressure CVD of graphene in hydrogen diluted methane and regulation of the flow rate of H-2, the etching effect during the growth process of graphene could be prominent and even shows macroscopic selectivity. On this basis, etching-controlled growth and synthesis of graphene with various morphologies from compact to dendritic even to fragmentary have been demonstrated. The morphology selection mechanism is clarified through phase-field theory based on simulations. This study not only presents an intriguing case for the fundamental mechanism of CVD growth but also provides a facile method for the synthesis of high-quality graphene with trimmed morphologies. |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.iccas.ac.cn/handle/121111/38174] ![]() |
专题 | 化学研究所_有机固体实验室 |
作者单位 | 1.Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China 2.Tsinghua Univ, Appl Mech Lab, Dept Engn Mech, Beijing 100084, Peoples R China 3.Tsinghua Univ, Ctr Nano & Micro Mech, Beijing 100084, Peoples R China 4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
推荐引用方式 GB/T 7714 | Luo, Birong,Gao, Enlai,Geng, Dechao,et al. Etching-Controlled Growth of Graphene by Chemical Vapor Deposition[J]. CHEMISTRY OF MATERIALS,2017,29(3):1022-1027. |
APA | Luo, Birong,Gao, Enlai,Geng, Dechao,Wang, Huaping,Xu, Zhiping,&Yu, Gui.(2017).Etching-Controlled Growth of Graphene by Chemical Vapor Deposition.CHEMISTRY OF MATERIALS,29(3),1022-1027. |
MLA | Luo, Birong,et al."Etching-Controlled Growth of Graphene by Chemical Vapor Deposition".CHEMISTRY OF MATERIALS 29.3(2017):1022-1027. |
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